RBA250N10CHPF-4UA02#GB0
Renesas Electronics America Inc
Renesas Electronics America Inc
MP-25LZU
$4.37
Available to order
Reference Price (USD)
1+
$4.37000
500+
$4.3263
1000+
$4.2826
1500+
$4.2389
2000+
$4.1952
2500+
$4.1515
Exquisite packaging
Discount
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Renesas Electronics America Inc presents RBA250N10CHPF-4UA02#GB0, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RBA250N10CHPF-4UA02#GB0 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 250A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 2.4mOhm @ 125A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
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