RE1J002YNTCL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 50V 200MA EMT3F
$0.38
Available to order
Reference Price (USD)
3,000+
$0.06210
6,000+
$0.05400
15,000+
$0.04590
30,000+
$0.04320
75,000+
$0.04050
150,000+
$0.03780
Exquisite packaging
Discount
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Discover high-performance RE1J002YNTCL from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RE1J002YNTCL delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V
- Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: EMT3F (SOT-416FL)
- Package / Case: SC-89, SOT-490
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