RFD16N06LESM9A
onsemi
onsemi
MOSFET N-CH 60V 16A TO252AA
$1.96
Available to order
Reference Price (USD)
2,500+
$0.67678
5,000+
$0.64481
12,500+
$0.62197
Exquisite packaging
Discount
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Upgrade your electronic designs with RFD16N06LESM9A by onsemi, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RFD16N06LESM9A ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 47mOhm @ 16A, 5V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
- Vgs (Max): +10V, -8V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 90W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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