Shopping cart

Subtotal: $0.00

RFN10BGE3STL

Rohm Semiconductor
RFN10BGE3STL Preview
Rohm Semiconductor
RFN10BGE3S IS THE SILICON EPITAX
$1.22
Available to order
Reference Price (USD)
1+
$1.22000
500+
$1.2078
1000+
$1.1956
1500+
$1.1834
2000+
$1.1712
2500+
$1.159
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 350 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 350 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252GE
  • Operating Temperature - Junction: 150°C

Related Products

Vishay General Semiconductor - Diodes Division

1N3613GP-E3/54

Microchip Technology

UPR5/TR7

Nexperia USA Inc.

BAT46WJ,115

Vishay General Semiconductor - Diodes Division

UF4005-E3/53

Vishay General Semiconductor - Diodes Division

VS-SD800C30L

Vishay General Semiconductor - Diodes Division

VS-T70HF120

Yangzhou Yangjie Electronic Technology Co.,Ltd

SL54F-F1-3000HF

Vishay General Semiconductor - Diodes Division

VS-70HF120

Micro Commercial Co

6A2-TP

Taiwan Semiconductor Corporation

SK33BH

Top