RGC80TSX8RGC11
Rohm Semiconductor
Rohm Semiconductor
IGBT
$9.87
Available to order
Reference Price (USD)
1+
$9.87000
500+
$9.7713
1000+
$9.6726
1500+
$9.5739
2000+
$9.4752
2500+
$9.3765
Exquisite packaging
Discount
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The RGC80TSX8RGC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGC80TSX8RGC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1800 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 40A
- Power - Max: 535 W
- Switching Energy: 1.85mJ (on), 1.6mJ (off)
- Input Type: Standard
- Gate Charge: 468 nC
- Td (on/off) @ 25°C: 80ns/565ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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