RGS80TSX2HRC11
Rohm Semiconductor
Rohm Semiconductor
1200V 40A FIELD STOP TRENCH IGBT
$11.61
Available to order
Reference Price (USD)
1+
$11.61000
500+
$11.4939
1000+
$11.3778
1500+
$11.2617
2000+
$11.1456
2500+
$11.0295
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RGS80TSX2HRC11 Single IGBT from Rohm Semiconductor redefines reliability in power electronics. Tailored for renewable energy, telecom, and defense applications, it offers ultra-low switching losses and high-frequency operation. With anti-parallel diodes and short-circuit ratings, it s built for safety and performance. Rohm Semiconductor stands behind every RGS80TSX2HRC11 with unmatched customer service. Start your order process by contacting our sales team today!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 555 W
- Switching Energy: 3mJ (on), 3.1mJ (off)
- Input Type: Standard
- Gate Charge: 104 nC
- Td (on/off) @ 25°C: 49ns/199ns
- Test Condition: 600V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
Related Products
onsemi
FGHL50T65SQ
IXYS
IXXX160N65C4
onsemi
ISL9V3040S3ST-F085C
STMicroelectronics
STGD10NC60SDT4
Fairchild Semiconductor
HGT1S7N60A4DS
onsemi
FGH40N60UFDTU
Alpha & Omega Semiconductor Inc.
AOB5B65M1
Infineon Technologies
IRG4PC50KPBF
STMicroelectronics
STGD4M65DF2
Infineon Technologies