RGW00TS65DGC11
Rohm Semiconductor
Rohm Semiconductor
650V 50A FIELD STOP TRENCH IGBT
$6.54
Available to order
Reference Price (USD)
1+
$5.72000
10+
$5.14100
25+
$4.86000
100+
$4.21200
450+
$3.99600
900+
$3.58560
1,350+
$3.02400
Exquisite packaging
Discount
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The RGW00TS65DGC11 Single IGBT from Rohm Semiconductor delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Rohm Semiconductor's commitment to innovation ensures RGW00TS65DGC11 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 96 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
- Power - Max: 254 W
- Switching Energy: 1.18mJ (on), 960µJ (off)
- Input Type: Standard
- Gate Charge: 141 nC
- Td (on/off) @ 25°C: 52ns/180ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 95 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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