RGWS80TS65DGC13
Rohm Semiconductor
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
$6.52
Available to order
Reference Price (USD)
1+
$6.52000
500+
$6.4548
1000+
$6.3896
1500+
$6.3244
2000+
$6.2592
2500+
$6.194
Exquisite packaging
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Choose RGWS80TS65DGC13 Single IGBTs by Rohm Semiconductor for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Rohm Semiconductor's reputation for quality makes RGWS80TS65DGC13 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 71 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
- Power - Max: 202 W
- Switching Energy: 700µJ (on), 660µJ (off)
- Input Type: Standard
- Gate Charge: 83 nC
- Td (on/off) @ 25°C: 40ns/114ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 88 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247G
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