RHU002N06T106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 200MA UMT3
$0.44
Available to order
Reference Price (USD)
3,000+
$0.06360
6,000+
$0.05724
15,000+
$0.05088
30,000+
$0.04770
75,000+
$0.04452
Exquisite packaging
Discount
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Optimize your electronic systems with RHU002N06T106, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, RHU002N06T106 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 2.4Ohm @ 200mA, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
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