RJ1G08CGNTLL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 40V 80A LPTL
$2.23
Available to order
Reference Price (USD)
1+
$2.23000
500+
$2.2077
1000+
$2.1854
1500+
$2.1631
2000+
$2.1408
2500+
$2.1185
Exquisite packaging
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Discover high-performance RJ1G08CGNTLL from Rohm Semiconductor, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, RJ1G08CGNTLL delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 500µA
- Gate Charge (Qg) (Max) @ Vgs: 31.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 78W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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