RJ1L08CGNTLL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 60V 80A LPTL
$2.71
Available to order
Reference Price (USD)
1+
$2.71000
500+
$2.6829
1000+
$2.6558
1500+
$2.6287
2000+
$2.6016
2500+
$2.5745
Exquisite packaging
Discount
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Rohm Semiconductor presents RJ1L08CGNTLL, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RJ1L08CGNTLL delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.7mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 96W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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