RJ1P12BBDTLL
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 100V 120A LPTL
$5.52
Available to order
Reference Price (USD)
1+
$5.52000
500+
$5.4648
1000+
$5.4096
1500+
$5.3544
2000+
$5.2992
2500+
$5.244
Exquisite packaging
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Discover RJ1P12BBDTLL, a versatile Transistors - FETs, MOSFETs - Single solution from Rohm Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 5.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 178W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LPTL
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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