RJH60D7BDPQ-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 90A 300W TO-247
$6.12
Available to order
Reference Price (USD)
1+
$6.41000
10+
$5.72300
25+
$5.15040
100+
$4.69250
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose RJH60D7BDPQ-E0#T2 Single IGBTs by Renesas Electronics America Inc for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Renesas Electronics America Inc's reputation for quality makes RJH60D7BDPQ-E0#T2 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 90 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
- Power - Max: 300 W
- Switching Energy: 700µJ (on), 1.4mJ (off)
- Input Type: Standard
- Gate Charge: 125 nC
- Td (on/off) @ 25°C: 60ns/180ns
- Test Condition: 300V, 50A, 5Ohm, 15V
- Reverse Recovery Time (trr): 25 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
Related Products
Fairchild Semiconductor
73389
Harris Corporation
HGTG40N60B3
Rohm Semiconductor
RGTH40TS65DGC13
Infineon Technologies
AUIRGP4063D
Rohm Semiconductor
RGS30TSX2DGC11
Infineon Technologies
IRGS4630DPBF
NTE Electronics, Inc
NTE3301
STMicroelectronics
STGWA80H65FB
Rohm Semiconductor
RGTH60TS65DGC13
STMicroelectronics