RJH65T14DPQ-A0#T0
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 100A TO247A
$4.19
Available to order
Reference Price (USD)
1+
$4.19000
500+
$4.1481
1000+
$4.1062
1500+
$4.0643
2000+
$4.0224
2500+
$3.9805
Exquisite packaging
Discount
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Choose RJH65T14DPQ-A0#T0 Single IGBTs by Renesas Electronics America Inc for superior power handling in demanding environments. From railway systems to industrial drives, these transistors excel with features like avalanche ruggedness and integrated diodes. Their modular design simplifies installation and maintenance. Renesas Electronics America Inc's reputation for quality makes RJH65T14DPQ-A0#T0 a smart investment. Email us now for datasheets and volume discounts!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 100 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
- Power - Max: 250 W
- Switching Energy: 1.3mJ (on), 1.2mJ (off)
- Input Type: Standard
- Gate Charge: 80 nC
- Td (on/off) @ 25°C: 38ns/125ns
- Test Condition: 400V, 50A, 10Ohm, 15V
- Reverse Recovery Time (trr): 250 ns
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247A
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