RJK0702DPN-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 75V 90A TO220AB
$2.44
Available to order
Reference Price (USD)
1+
$2.44000
500+
$2.4156
1000+
$2.3912
1500+
$2.3668
2000+
$2.3424
2500+
$2.318
Exquisite packaging
Discount
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Renesas Electronics America Inc presents RJK0702DPN-E0#T2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RJK0702DPN-E0#T2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 75 V
- Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.8mOhm @ 45A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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