RJK5002DPD-00#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 500V 2.4A MP3A
$0.52
Available to order
Reference Price (USD)
1+
$0.51937
500+
$0.5141763
1000+
$0.5089826
1500+
$0.5037889
2000+
$0.4985952
2500+
$0.4934015
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Renesas Electronics America Inc presents RJK5002DPD-00#J2, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RJK5002DPD-00#J2 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500 V
- Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 30W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MP-3A
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Fairchild Semiconductor
FDB7042L
Vishay Siliconix
SIR4604DP-T1-GE3
Texas Instruments
CSD17505Q5A
NTE Electronics, Inc
NTE491T
Infineon Technologies
IRF6665TRPBF
Fairchild Semiconductor
FQP9N50
Diodes Incorporated
ZXMP3A16N8TA
Vishay Siliconix
SUD40151EL-GE3
NXP USA Inc.
PMPB16XN,115
STMicroelectronics