RM30P55LD
Rectron USA
Rectron USA
MOSFET P-CHANNEL 55V 30A TO252-2
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
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RM30P55LD by Rectron USA is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RM30P55LD ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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