RM60N40LD
Rectron USA
Rectron USA
MOSFET N-CHANNEL 40V 60A TO252-2
$0.33
Available to order
Reference Price (USD)
1+
$0.33000
500+
$0.3267
1000+
$0.3234
1500+
$0.3201
2000+
$0.3168
2500+
$0.3135
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover RM60N40LD, a versatile Transistors - FETs, MOSFETs - Single solution from Rectron USA, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 65W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-2
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
onsemi
FDP047N10
Toshiba Semiconductor and Storage
TPH6R003NL,LQ
STMicroelectronics
STW30N80K5
Vishay Siliconix
SIHA24N65EF-GE3
Taiwan Semiconductor Corporation
TSM170N06CP ROG
Vishay Siliconix
SIHP240N60E-GE3
Infineon Technologies
BF2040RE6814
Vishay Siliconix
SI8457DB-T1-E1
Renesas Electronics America Inc
NP40N10VDF-E1-AY
Texas Instruments