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RMA7N20ED1

Rectron USA
RMA7N20ED1 Preview
Rectron USA
MOSFET N-CH 20V 700MA DFN1006-3
$0.03
Available to order
Reference Price (USD)
1+
$0.02900
500+
$0.02871
1000+
$0.02842
1500+
$0.02813
2000+
$0.02784
2500+
$0.02755
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 260mOhm @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1006-3
  • Package / Case: SC-101, SOT-883

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