RMA7P20ED1
Rectron USA
Rectron USA
MOSFET P-CH 20V 700MA DFN1006-3
$0.03
Available to order
Reference Price (USD)
1+
$0.02900
500+
$0.02871
1000+
$0.02842
1500+
$0.02813
2000+
$0.02784
2500+
$0.02755
Exquisite packaging
Discount
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Experience the power of RMA7P20ED1, a premium Transistors - FETs, MOSFETs - Single from Rectron USA. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RMA7P20ED1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 700mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 420mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 52 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -50°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006-3
- Package / Case: SC-101, SOT-883
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