RN1106MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
$0.17
Available to order
Reference Price (USD)
8,000+
$0.02657
16,000+
$0.02310
24,000+
$0.02079
56,000+
$0.01848
200,000+
$0.01540
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuits with the RN1106MFV,L3F from Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Toshiba Semiconductor and Storage provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
Related Products
Micro Commercial Co
DTC114EE-TP
Nexperia USA Inc.
PDTA123JQCZ
Nexperia USA Inc.
PDTC143XQBZ
Rohm Semiconductor
DTA123JEBHZGTL
Diodes Incorporated
DDTA123YUA-7-F
Nexperia USA Inc.
PDTD123EQAZ
Toshiba Semiconductor and Storage
RN2401,LXHF
Infineon Technologies
BCR129FE6327
onsemi
DTC123JET1G
Diodes Incorporated