RN1110MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
$0.03
Available to order
Reference Price (USD)
8,000+
$0.02898
Exquisite packaging
Discount
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The RN1110MFV,L3F by Toshiba Semiconductor and Storage is a high-performance solution in the Discrete Semiconductor Products sector. These Transistors - Bipolar (BJT) - Single, Pre-Biased are crafted for excellence, featuring high efficiency, low thermal resistance, and long lifespan. Perfect for use in power converters, lighting systems, and communication devices. Toshiba Semiconductor and Storage guarantees superior products and support. Get in touch today to explore our offerings!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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