RN1310,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q NPN BRT, Q1BSR=4.7K,
$0.40
Available to order
Reference Price (USD)
1+
$0.40000
500+
$0.396
1000+
$0.392
1500+
$0.388
2000+
$0.384
2500+
$0.38
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the RN1310,LXHF from Toshiba Semiconductor and Storage for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Toshiba Semiconductor and Storage is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
Related Products
onsemi
SMUN2214T1G
Rohm Semiconductor
DTC015TMT2L
Diodes Incorporated
DDTD142TC-7-F
Nexperia USA Inc.
PDTB123YQAZ
Panasonic Electronic Components
UNR31A3G0L
Diodes Incorporated
DDTC124GE-7
Fairchild Semiconductor
FJY4013R
Diodes Incorporated
DDTC114YE-7-F
Diodes Incorporated
DDTC144TUA-7
Nexperia USA Inc.