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RN1402,LF

Toshiba Semiconductor and Storage
RN1402,LF Preview
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.22
Available to order
Reference Price (USD)
3,000+
$0.03864
6,000+
$0.03360
15,000+
$0.02856
30,000+
$0.02688
75,000+
$0.02520
150,000+
$0.02240
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • Transistor Type: NPN - Pre-Biased
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 50 V
  • Resistor - Base (R1): 10 kOhms
  • Resistor - Emitter Base (R2): 10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
  • Current - Collector Cutoff (Max): 500nA
  • Frequency - Transition: 250 MHz
  • Power - Max: 200 mW
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini

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