RN1404,LXHF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SINGLE NPN Q1BSR=47K,
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Choose the RN1404,LXHF from Toshiba Semiconductor and Storage for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Toshiba Semiconductor and Storage is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
onsemi
MUN2230T1G
Diodes Incorporated
ADTA144VCAQ-13
Rohm Semiconductor
DTA044TEBTL
Toshiba Semiconductor and Storage
RN2115MFV,L3F
Infineon Technologies
BCR166WH6327XTSA1
Toshiba Semiconductor and Storage
RN1421TE85LF
NXP USA Inc.
PDTA124XMB,315
Nexperia USA Inc.
PBRP123ET,215
Rohm Semiconductor
DTA123EU3T106
Diodes Incorporated