RN1411,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
Discount
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Optimize your circuits with the RN1411,LF from Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Toshiba Semiconductor and Storage provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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