RN1412,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.20
Available to order
Reference Price (USD)
1+
$0.20000
500+
$0.198
1000+
$0.196
1500+
$0.194
2000+
$0.192
2500+
$0.19
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1412,LF by Toshiba Semiconductor and Storage is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Toshiba Semiconductor and Storage stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
Fairchild Semiconductor
FJX3001RTF
Nexperia USA Inc.
PDTC144EMB,315
Rohm Semiconductor
DTA114EETL
NXP USA Inc.
PDTA143TMB,315
Rohm Semiconductor
DTA013ZMT2L
Rohm Semiconductor
DTC124XU3T106
Toshiba Semiconductor and Storage
RN2109,LXHF(CT
Rohm Semiconductor
DTC143EEBTL
Toshiba Semiconductor and Storage
RN2131MFV,L3F
Toshiba Semiconductor and Storage