RN1413(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.29
Available to order
Reference Price (USD)
3,000+
$0.02945
6,000+
$0.02657
15,000+
$0.02310
30,000+
$0.02079
75,000+
$0.01848
150,000+
$0.01540
Exquisite packaging
Discount
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Enhance your electronic designs with the RN1413(TE85L,F) by Toshiba Semiconductor and Storage, a standout in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are engineered for superior performance and longevity. Notable features include low noise, high frequency response, and excellent thermal characteristics. Suitable for audio amplifiers, LED drivers, and motor control circuits. Toshiba Semiconductor and Storage is committed to delivering high-quality components. Request a quote or additional information today!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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