RN1510(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.3W SMV
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
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Experience precision engineering with Toshiba Semiconductor and Storage's RN1510(TE85L,F) Bipolar Junction Transistor Arrays, the optimal solution for space-efficient designs. These pre-biased components eliminate external resistor needs while providing predictable performance in amplification and switching roles. Application sectors include automotive electronics, power tools, and renewable energy systems where reliability is paramount. The product family offers multiple configuration options, all featuring low quiescent current, high gain bandwidth product, and robust EMC performance. Toshiba Semiconductor and Storage provides comprehensive technical resources for RN1510(TE85L,F) integration. Take the next step request a quote or design consultation through our convenient inquiry portal!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
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