RN1710,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.
$0.05
Available to order
Reference Price (USD)
1+
$0.05364
500+
$0.0531036
1000+
$0.0525672
1500+
$0.0520308
2000+
$0.0514944
2500+
$0.050958
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage presents the RN1710,LF series innovative Pre-Biased BJT Arrays redefining compact circuit solutions. These transistor arrays feature carefully matched parameters and integrated biasing for plug-and-play functionality in diverse applications. Typical uses include interface circuits between different logic families, LED matrix control, and power management in IoT devices. Engineering advantages comprise low noise operation, high current capability, and excellent batch-to-batch consistency. With Toshiba Semiconductor and Storage's global supply chain support, you'll never face stock shortages. Get detailed product information and volume discounts send your RN1710,LF inquiry today and our experts will assist you!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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