RN1711JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANSISTOR NPN X2 BRT Q1BSR10KOH
$0.08
Available to order
Reference Price (USD)
1+
$0.07632
500+
$0.0755568
1000+
$0.0747936
1500+
$0.0740304
2000+
$0.0732672
2500+
$0.072504
Exquisite packaging
Discount
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Discover high-quality RN1711JE(TE85L,F) Bipolar Junction Transistor (BJT) Arrays from Toshiba Semiconductor and Storage, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Toshiba Semiconductor and Storage's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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