RN1904,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.2W US6
$0.07
Available to order
Reference Price (USD)
3,000+
$0.06521
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Toshiba Semiconductor and Storage's RN1904,LF(CT advanced Pre-Biased Transistor Arrays engineered for modern electronics. These BJT arrays provide ready-to-use solutions with internal resistor networks, significantly reducing design complexity and BOM costs. Application highlights include power supply circuits, display drivers, and microcontroller interfaces in automotive, aerospace, and industrial environments. Technical features comprise low VCE(sat), tight current gain matching, and RoHS compliance for environmental safety. Toshiba Semiconductor and Storage stands behind every RN1904,LF(CT unit with rigorous quality testing. Streamline your procurement process contact our sales team via the inquiry form for personalized assistance!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
Related Products
onsemi
EMA6DXV5T1G
onsemi
NSBC114TPDXV6T1
Toshiba Semiconductor and Storage
RN4991FE,LF(CT
Toshiba Semiconductor and Storage
RN2706JE(TE85L,F)
Toshiba Semiconductor and Storage
RN2910FE,LXHF(CT
Rohm Semiconductor
EMD3FHAT2R
Rohm Semiconductor
EMB11FHAT2R
Rohm Semiconductor
EMF5T2R
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Diodes Incorporated