RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
$0.15
Available to order
Reference Price (USD)
1+
$0.15000
500+
$0.1485
1000+
$0.147
1500+
$0.1455
2000+
$0.144
2500+
$0.1425
Exquisite packaging
Discount
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Discover high-quality RN1962FE(TE85L,F) Bipolar Junction Transistor (BJT) Arrays from Toshiba Semiconductor and Storage, designed for reliable performance in various electronic applications. These pre-biased transistor arrays offer excellent switching and amplification capabilities, making them ideal for compact circuit designs. Common applications include signal processing, driver circuits, and load switching in consumer electronics, industrial controls, and automotive systems. Features include matched pairs for consistent performance, low saturation voltage, and thermal stability. Upgrade your electronic projects with Toshiba Semiconductor and Storage's precision-engineered components. Contact us today for pricing and availability submit your inquiry now!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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