RN2103(T5L,F,T)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS PNP 50V 0.1A SSM
$0.28
Available to order
Reference Price (USD)
1+
$0.28000
500+
$0.2772
1000+
$0.2744
1500+
$0.2716
2000+
$0.2688
2500+
$0.266
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your projects with the RN2103(T5L,F,T) by Toshiba Semiconductor and Storage, a top-tier choice in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased offer outstanding durability and precision, ensuring optimal performance in any circuit. Key features include high current gain, low saturation voltage, and thermal stability. Ideal for use in power management, signal processing, and automation systems. Toshiba Semiconductor and Storage guarantees top-notch quality and performance. Reach out now to learn more or request a sample!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Nexperia USA Inc.
PDTA113EM,315
Toshiba Semiconductor and Storage
RN2404,LF
Toshiba Semiconductor and Storage
RN2314(TE85L,F)
Nexperia USA Inc.
PDTC143XM,315
onsemi
NSBC143TPDXV6T1
Diodes Incorporated
DDTB142TC-7-F
Diodes Incorporated
DDTA143ZUA-7
Diodes Incorporated
ADTC143ZCAQ-7
Rohm Semiconductor
DTB123TCHZGT116
Rohm Semiconductor