RN2111,LXHF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
AUTO AEC-Q SINGLE PNP Q1BSR=10K,
$0.34
Available to order
Reference Price (USD)
1+
$0.34000
500+
$0.3366
1000+
$0.3332
1500+
$0.3298
2000+
$0.3264
2500+
$0.323
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your circuits with the RN2111,LXHF(CT from Toshiba Semiconductor and Storage, a leader in Discrete Semiconductor Products. Our Transistors - Bipolar (BJT) - Single, Pre-Biased deliver unmatched performance and durability. Features include high current capacity, minimal leakage, and robust packaging. Ideal for use in IoT devices, robotics, and power supplies. Toshiba Semiconductor and Storage provides reliable and innovative solutions. Inquire today for more details or to place an order!
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 10 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-75, SOT-416
- Supplier Device Package: SSM
Related Products
Toshiba Semiconductor and Storage
RN1312(TE85L,F)
Nexperia USA Inc.
PDTC114TU,115
Diodes Incorporated
DDTC124TUA-7
Toshiba Semiconductor and Storage
RN2308(TE85L,F)
Panasonic Electronic Components
UNR52A8G0L
onsemi
MUN2135T1G
Rohm Semiconductor
DTC143TCAHZGT116
Diodes Incorporated
DDTC113TE-7
Diodes Incorporated
DDTC144WCA-7
Toshiba Semiconductor and Storage