RN2507(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.3W SMV
$0.49
Available to order
Reference Price (USD)
3,000+
$0.08820
6,000+
$0.07938
15,000+
$0.07056
30,000+
$0.06615
75,000+
$0.05880
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Toshiba Semiconductor and Storage's RN2507(TE85L,F) represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, Toshiba Semiconductor and Storage guarantees quality and performance. Get competitive quotes and lead times inquire about RN2507(TE85L,F) now!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SC-74A, SOT-753
- Supplier Device Package: SMV
Related Products
Rohm Semiconductor
IMB10AT110
Rohm Semiconductor
EMG2T2R
onsemi
NSBA143ZDP6T5G
Infineon Technologies
BCR08PNH6433XTMA1
Toshiba Semiconductor and Storage
RN4901,LXHF(CT
Diodes Incorporated
ADC144EUQ-7
Toshiba Semiconductor and Storage
RN4905,LXHF(CT
Rohm Semiconductor
UMF5NTR
NXP USA Inc.
PEMB1,115
Diodes Incorporated