RN2710,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNPX2 BRT Q1BSR47KOHM Q1BER22KOH
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic designs with Toshiba Semiconductor and Storage's RN2710,LF BJT Array solution, offering pre-configured biasing for immediate implementation. These transistor arrays excel in switching and linear applications where space and efficiency are critical. The product series demonstrates superior characteristics: thermal shutdown protection, high-frequency response, and ESD protection for durable performance. Commonly deployed in battery-powered devices, motor controllers, and audio amplifiers across multiple industries. Toshiba Semiconductor and Storage combines decades of semiconductor experience with cutting-edge manufacturing techniques. Don't compromise on quality request samples or volume pricing for RN2710,LF through our quick inquiry system!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
Related Products
onsemi
SMUN5313DW1T1G
Nexperia USA Inc.
NHUMD2X
Infineon Technologies
BCR185SH6327XTSA1
Nexperia USA Inc.
PIMH9,115
Toshiba Semiconductor and Storage
RN2902FE,LXHF(CT
Panasonic Electronic Components
DMC566050R
Nexperia USA Inc.
PRMD10Z
Diodes Incorporated
DDC124EUQ-7-F
onsemi
MUN5334DW1T1G
Nexperia USA Inc.