RN2710JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ESV
$0.49
Available to order
Reference Price (USD)
4,000+
$0.08820
8,000+
$0.07938
12,000+
$0.07056
28,000+
$0.06615
100,000+
$0.05880
Exquisite packaging
Discount
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Maximize circuit reliability with Toshiba Semiconductor and Storage's RN2710JE(TE85L,F) Pre-Biased Transistor Arrays, the smart choice for modern electronic designs. These BJT arrays combine multiple transistors with bias networks in single packages, offering space savings and improved thermal characteristics. Target applications span from portable electronics to industrial automation systems, particularly where stable amplification and fast switching are required. Key benefits include reduced component count, simplified assembly processes, and enhanced signal integrity. Toshiba Semiconductor and Storage maintains strict quality control measures for all discrete semiconductor products. Interested in RN2710JE(TE85L,F) specifications or evaluation boards? Complete our brief inquiry form for prompt response!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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