RN2711,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
PNP X 2 BRT Q1BSR=10KOHM Q1BER=I
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
Discount
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Toshiba Semiconductor and Storage's RN2711,LF represents the next generation of Pre-Biased Bipolar Transistor Arrays, combining efficiency with compact design. These surface-mount compatible components feature integrated bias networks that reduce part count while improving system reliability. Ideal applications encompass power management, sensor interfaces, and digital circuit amplification in medical equipment, robotics, and smart home systems. Notable advantages include consistent hFE matching, reduced board space requirements, and simplified inventory management. As a leading supplier of discrete semiconductors, Toshiba Semiconductor and Storage guarantees quality and performance. Get competitive quotes and lead times inquire about RN2711,LF now!
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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