RN2970FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
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Select Toshiba Semiconductor and Storage's RN2970FE(TE85L,F) for superior Pre-Biased Transistor Array performance in demanding electronic environments. These BJT arrays deliver time-saving solutions with their integrated resistor networks and matched transistor characteristics. Ideal for audio amplifiers, level shifters, and digital logic interfaces in commercial and industrial equipment. Performance highlights include wide operating voltage ranges, excellent linearity, and resistance to thermal runaway. As a trusted semiconductor supplier, Toshiba Semiconductor and Storage offers flexible packaging options and reliable delivery schedules. Whether you need samples or production quantities, begin by submitting your RN2970FE(TE85L,F) inquiry our team awaits your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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