Shopping cart

Subtotal: $0.00

RS2J-E3/5BT

Vishay General Semiconductor - Diodes Division
RS2J-E3/5BT Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1.5A DO214AA
$0.44
Available to order
Reference Price (USD)
3,200+
$0.16412
6,400+
$0.15490
9,600+
$0.15029
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 17pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Diodes Incorporated

SDT10100P5-13D

Microchip Technology

JANS1N5419/TR

Vishay General Semiconductor - Diodes Division

VS-30APF12-M3

Nexperia USA Inc.

PMEG2020EJ/ZL,115

Panjit International Inc.

ERT1GAFC_R1_00001

onsemi

S3A

Vishay General Semiconductor - Diodes Division

SBL10L25-E3/45

Vishay General Semiconductor - Diodes Division

V2FM10HM3/H

Panjit International Inc.

SR32F_R2_00001

Panjit International Inc.

GS1KWG_R1_00001

Top