RSS095N05FU6TB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 45V 9.5A 8SOP
$2.12
Available to order
Reference Price (USD)
2,500+
$0.79520
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
RSS095N05FU6TB by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, RSS095N05FU6TB ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 45 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 5 V
- Vgs (Max): 20V
- Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Vishay Siliconix
SQD50N05-11L_GE3
Nexperia USA Inc.
BSP126,115
Diodes Incorporated
ZXMN10A09KTC
onsemi
NVD5C464NT4G
onsemi
NDB5060L
Renesas Electronics America Inc
TBB1004DMTL-H
Infineon Technologies
IRF3415PBF
Fairchild Semiconductor
HUFA75344S3ST
Infineon Technologies
IAUA180N08S5N026AUMA1
IXYS