RUC002N05HZGT116
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 50V 200MA SST3
$0.26
Available to order
Reference Price (USD)
3,000+
$0.03450
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RUC002N05HZGT116 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RUC002N05HZGT116 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 50 V
- Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SST3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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