RX3G18BGNC16
Rohm Semiconductor
Rohm Semiconductor
NCH 40V 180A, TO-220AB, POWER MO
$6.90
Available to order
Reference Price (USD)
1+
$6.90000
500+
$6.831
1000+
$6.762
1500+
$6.693
2000+
$6.624
2500+
$6.555
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with RX3G18BGNC16 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RX3G18BGNC16 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
Related Products
Vishay Siliconix
IRFS9N60ATRRPBF
STMicroelectronics
STWA30N65DM6AG
Infineon Technologies
IPW60R099CPFKSA1
onsemi
NVTFS5C673NLTAG
STMicroelectronics
STF7N95K3
Panjit International Inc.
PJS6417_S1_00001
Vishay Siliconix
SI4162DY-T1-GE3
STMicroelectronics
STB200N6F3
Vishay Siliconix
SISH112DN-T1-GE3
STMicroelectronics