RX3L07BGNC16
Rohm Semiconductor
Rohm Semiconductor
NCH 60V 70A, TO-220AB, POWER MOS
$3.19
Available to order
Reference Price (USD)
1+
$3.19000
500+
$3.1581
1000+
$3.1262
1500+
$3.0943
2000+
$3.0624
2500+
$3.0305
Exquisite packaging
Discount
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Experience the power of RX3L07BGNC16, a premium Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RX3L07BGNC16 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7.2mOhm @ 70A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 96W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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