Shopping cart

Subtotal: $0.00

S1JL RQG

Taiwan Semiconductor Corporation
S1JL RQG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Taiwan Semiconductor Corporation

S10KCHR7G

Taiwan Semiconductor Corporation

ES2LG R5G

Vishay General Semiconductor - Diodes Division

FGP30D-E3/54

Vishay General Semiconductor - Diodes Division

VS-1N3891R

Vishay General Semiconductor - Diodes Division

10ETS08

Panasonic Electronic Components

MA2SD190GL

Toshiba Semiconductor and Storage

TRS6E65C,S1AQ

Comchip Technology

CDBK0530

Taiwan Semiconductor Corporation

HERAF802G C0G

Taiwan Semiconductor Corporation

RS1GHR3G

Top