SCT2280KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 14A TO247
$11.02
Available to order
Reference Price (USD)
1+
$10.02000
10+
$9.05200
25+
$8.63040
100+
$7.49380
360+
$7.15700
720+
$6.52550
1,080+
$5.89400
Exquisite packaging
Discount
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Boost your electronic applications with SCT2280KEC, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SCT2280KEC meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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