SCT2H12NYTB
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1700V 4A TO268
$6.96
Available to order
Reference Price (USD)
400+
$3.68150
800+
$3.30340
1,200+
$2.78600
Exquisite packaging
Discount
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Boost your electronic applications with SCT2H12NYTB, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SCT2H12NYTB meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 18V
- Vgs(th) (Max) @ Id: 4V @ 410µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 184 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 44W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-268
- Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
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