SCT3022KLGC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
$54.85
Available to order
Reference Price (USD)
1+
$102.95000
10+
$97.64100
25+
$94.98400
100+
$92.99150
Exquisite packaging
Discount
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Optimize your electronic systems with SCT3022KLGC11, a high-quality Transistors - FETs, MOSFETs - Single from Rohm Semiconductor. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SCT3022KLGC11 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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