SCT3060ALHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 39A TO247N
$26.52
Available to order
Reference Price (USD)
1+
$20.09000
10+
$18.52700
25+
$17.69480
100+
$15.82110
450+
$15.09247
Exquisite packaging
Discount
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Upgrade your electronic designs with SCT3060ALHRC11 by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, SCT3060ALHRC11 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 165W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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